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2N6667, 2N6668 Darlington Silicon Power Transistors
Designed for general-purpose amplifier and low speed switching applications.
* High DC Current Gain - * * * * * *
hFE = 3500 (Typ) @ IC = 4.0 Adc Collector-Emitter Sustaining Voltage - @ 200 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6667 = 80 Vdc (Min) - 2N6668 Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max)@ IC = 5.0 Adc Monolithic Construction with Built-In Base-Emitter Shunt Resistors TO-220AB Compact Package Complementary to 2N6387, 2N6388 Pb-Free Packages are Available*
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PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60-80 V, 65 W
MARKING DIAGRAM
4
COLLECTOR 1 2 3
STYLE 1: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
2N666x AYWWG
BASE
CASE 221A-09 TO-220AB x A Y WW G = 7 or 8 = Assembly Location = Year = Work Week = Pb-Free Package
8k
120
EMITTER
Figure 1. Darlington Schematic ORDERING INFORMATION
Device 2N6667 2N6667G Package TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free) Shipping 50 Units/Rail 50 Units/Rail
2N6668 2N6668G
50 Units/Rail 50 Units/Rail
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2005
1
June, 2005 - Rev. 5
Publication Order Number: 2N6667/D
II I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II III I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II III I II III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I III I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIII I IIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
ELECTRICAL CHARACTERISTICS (Note 1) (TC = 25_C unless otherwise noted)
THERMAL CHARACTERISTICS
MAXIMUM RATINGS (Note 1)
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
OFF CHARACTERISTICS
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Junction Temperature Range
Total Device Dissipation @ TA = 25_C Derate above 25_C
Total Device Dissipation @ TC = 25_C Derate above 25_C
Base Current
Collector Current - Continuous - Peak
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Small-Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Current Gain - Bandwidth Product (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)
Base-Emitter Saturation Voltage(IC = 5.0 Adc, IB = 0.01 Adc) (IC = 10 Adc, IB = 0.1 Adc)
Collector-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc) (IC = 10 Adc, IB = 0.1 Adc)
DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc) (IC = 10 Adc, VCE = 3.0 Vdc)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0)
Collector-Emitter Sustaining Voltage (Note 2) (IC = 200 mAdc, IB = 0)
Rating
Characteristic
Characteristic
2N6667, 2N6668
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2N6667 2N6668 2N6667 2N6668 2N6667 2N6668 2N6667 2N6668 Symbol TJ, Tstg VCEO VCB VEB PD PD IC IB VCEO(sus) Symbol VCE(sat) VBE(sat) ICEO IEBO ICEX Symbol |hfe| Cob hFE hfe RqJC RqJA 2N6667 60 60 - 65 to + 150 1000 1000 100 2.0 0.016 Min 65 0.52 20 60 80 250 5.0 - - - - - - - - - - - - 10 15 2N6668 62.5 1.92 Max 80 80 20000 - Max 200 300 300 3.0 3.0 2.8 4.5 2.0 3.0 5.0 1.0 1.0 - - - - mAdc mAdc mAdc mAdc _C/W _C/W W W/_C W W/_C mAdc Unit Unit Unit Vdc Vdc Vdc Adc Vdc Vdc Vdc _C pF - - -
2
2N6667, 2N6668
VCC - 30 V RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPES e.g., 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 tr, tf v 10 ns DUTY CYCLE = 1.0% RC TUT V2
APPROX
SCOPE
RB 51 D1 + 4.0 V 25 s [8k [ 120
+8V 0 V1
APPROX
- 12 V
Figure 2. Switching Times Test Circuit
TA 4 PD, POWER DISSIPATION (WATTS)
TC 80
10 7 5 3 TC t, TIME ( s) 2 1 0.7 0.5 0.3 0.2 tf tr ts
3
60
VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C
2
40 TA
1
20
.td
0
0
20
40
60 80 100 T, TEMPERATURE (C)
120
140
160
0.1 0.1
0.2
0.3
0.5 0.7
1
2
3
5
7
10
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Power Derating
Figure 4. Typical Switching Times
1 r(t) NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.01 0.02 0.05 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.1 0.2 0.5 1 2 5 t, TIME (ms) 10 20 50 P(pk) ZJC(t) = r(t) RJC RJC = 1.92C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 100 200 500 1000 0.2
0.05 0.03 0.02 0.01 0.01
Figure 5. Thermal Response
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3
2N6667, 2N6668
20 IC, COLLECTOR CURRENT (AMPS) 10 5 3 2 1 TJ = 150C 2N6667 BONDING WIRE LIMIT 2N6668 THERMAL LIMIT @ TC = 25C SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 1 5 20 30 50 70 100 2 3 7 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) dc 1 ms 5 ms 100 s
0.5 0.3 0.2 0.1
0.05 0.03 0.02
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
Figure 6. Maximum Safe Operating Area
10,000 hFE , SMALL-SIGNAL CURENT GAIN 5000 2000 C, CAPACITANCE (pF) 1000 500 200 100 50 TC = 25C VCE = 4 VOLTS IC = 3 AMPS
300
TJ = 25C 200
Cib 100 70 50
Cob
20 10 1 2 3 5 7 10 20 30 50 70 100 200 300 500 1000 30 0.1 0.2 0.5 1 2 5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100
f, FREQUENCY (kHz)
Figure 7. Typical Small-Signal Current Gain
Figure 8. Typical Capacitance
20,000 VCE = 3 V 10,000 hFE , DC CURRENT GAIN 7000 5000 3000 2000 1000 700 500 300 200 0.1 TJ = - 55C 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMPS) 5 7 10 TJ = 150C
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.6 TJ = 25C 2.2 IC = 2 A 1.8 4A 6A
TJ = 25C
1.4
1 0.6 0.3
0.5 0.7
1
2 3 57 IB, BASE CURRENT (mA)
10
20
30
Figure 9. Typical DC Current Gain
Figure 10. Typical Collector Saturation Region
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4
2N6667, 2N6668
3 V, TEMPERATURE COEFFICIENTS (mV/C) 2.5 TJ = 25C +5 +4 +3 +2 +1 0 -1 -2 -3 -4 -5 0.1 0.2 0.3 0.5 0.7 1 2 VC for VCE(sat) VB for VBE 25C to 150C -55 C to 25C 3 5 7 10 *IC/IB hFE @ VCE + 3.0 V 3 25C to 150C -55 C to 25C
V, VOLTAGE (VOLTS)
2 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3 V VCE(sat) @ IC/IB = 250 0.2 0.3 0.5 0.7 1 23 IC, COLLECTOR CURRENT (AMPS) 5 7 10
1.5
1
0.5 0.1
IC, COLLECTOR CURRENT (AMP)
Figure 11. Typical "On" Voltages
Figure 12. Typical Temperature Coefficients
105 104 IC, COLLECTOR CURRENT ( A) 103 102 TJ = 150C 100C 25C +0.4 +0.2 0 -0.2 -0.4 -0.6 -0.8 -1 VBE, BASE-EMITTER VOLTAGE (VOLTS) -1.2 -1.4 101 100 REVERSE FORWARD
VCE = 30 V
10- 1 +0.6
Figure 13. Typical Collector Cut-Off Region
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5
2N6667, 2N6668
PACKAGE DIMENSIONS
TO-220AB CASE 221A-09 ISSUE AA
-T- B
4
SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
H Z L V G D N
STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR
R J
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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6
2N6667/D

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